
Name |
NS6500G2 |
NS6600G2 |
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Type |
2.5 inch NVMe SSD |
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Form Factor |
U.2 |
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Interface |
PCIe Gen4 x4 |
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Capacity |
1.92TB |
3.84TB |
7.68TB |
1.6TB |
3.2TB |
6.4TB |
128KB sequential read |
7400 MB/s |
7400 MB/s |
7400 MB/s |
7400 MB/s |
7400 MB/s |
7400 MB/s |
128KB sequential write |
2800 MB/s |
5300 MB/s |
6100 MB/s |
2800 MB/s |
5300 MB/s |
6100 MB/s |
4KB sustained random read |
850K IOPs |
1100K IOPs |
1200K IOPs |
850K IOPs |
1100K IOPs |
1200K IOPs |
4KB sustained random write |
120K IOPs |
200K IOPs |
240K IOPs |
200K IOPs |
400K IOPs |
440K IOPs |
4KB sustained random write |
70μs |
70μs |
71μs |
70μs |
70μs |
71μs |
4KB average write latency |
9μs |
9μs |
9μs |
9μs |
9μs |
9μs |
4KB random read IOPs consistency |
99% |
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4KB random read IOPs consistency |
99% |
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Years of quality assurance |
5 years |
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Drive Writes Per Day(DWPD) |
1 |
3 |
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Mean Time Between Failures(MTBF) |
2.50 million hours |
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Uncorrectable Bit Error Rate(UBER) |
≤ 10-17 |
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Data retention |
3 months (≤ 40 ° C) |
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Hot Pluggable |
Yes |
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Power Loss Protection |
Yes |
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Product Certification |
RoHS、CE、FCC、UL、etc. |
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Other Functions |
NDU, atomic write, multi-level power management, SMART , in-band and out-of-band management, TRIM, self-encryption, Telemetry, write zero, write uncorrectable, Device Self-Test (DST), sanitize, WRR , etc. |